| PART |
Description |
Maker |
| M2V56S20AKT M2V56S20AKT-5 M2V56S20AKT-6 M2V56S20AK |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2S56D20AKT M2S56D20ATP M2S56D30AKT M2S56D30ATP M2 |
256M Double Data Rate Synchronous DRAM
|
Elpida Memory
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
